Appendices

 

Appendix A

sample

pressure

Total flow

H2

CH4

B2H6

B:C

B doping

growth

time

sbt

%d

 

(torr)

(sccm)

%

%

%

(ppm)

(cm-3)

(hours)

 

 

B8

24

205.8

97.2%

2.80%

0.000%

0

0

7.67

a

n/a

B13

26

201.4

99.3%

0.71%

0.000%

0

0

7.20

b

n/a

B117

20

201.5

99.3%

0.71%

0.001%

2932

5 1020

9.08

a

59%

B123

19

201.4

99.3%

0.71%

0.000%

0

0

15.72

a

n/a

B128

20

201.6

99.3%

0.71%

0.000%

48

8 1018

17.93

c

41%

B129

20

201.6

99.3%

0.71%

0.000%

50

9 1018

17.65

c

34%

B132

20

201.7

99.3%

0.71%

0.000%

50

9 1018

18.02

c

52%

B140

25

201.5

99.3%

0.71%

0.000%

50

9 1018

16.13

c

99%

B141

23

202.1

99.3%

0.71%

0.000%

497

9 1019

8.22

a

99%

B142

22

201.4

99.3%

0.71%

0.000%

0

0

5.58

c

n/a

B147

20

201.7

99.3%

0.71%

0.000%

50

9 1018

11.18

c Ti

100%

Q1

20

200.0

99.0%

1.00%

0.000%

0

0

7

g

n/a

Q2

20

200.0

99.0%

1.00%

0.000%

0

0

7

g

n/a

Q3

20

200.0

99.0%

1.00%

0.000%

0

0

7

g

n/a

Q4

20

200.0

98.0%

2.00%

0.000%

0

0

7

g

n/a


Table A.1. Summary of Diamond Growth Runs

 

Key to Symbols used:

 

Sbt: substrate used

a : p-type boron (B) doped silicon, (100) orientation,

400 mm thick, 1 10 W cm resistivity

b: n-type phosphorous (P) doped silicon, (100) orientation,

400 600 mm thick, resistivity < 0.5 W cm

c: undoped silicon, <100> orientation, 3 mm thick

g: undoped quartz, 1 mm

c Ti : c silicon partially covered by titanium (Ti)

%d: percentage of growth run for which diborane was added to the gas mix.

 

Note: Data provided by Dr Latto and Dr May