Appendices
Appendix A
|
sample |
pressure |
Total flow |
H2 |
CH4 |
B2H6 |
B:C |
B doping |
growth time |
sbt |
%d |
|
|
(torr) |
(sccm) |
% |
% |
% |
(ppm) |
(cm-3) |
(hours) |
|
|
|
B8 |
24 |
205.8 |
97.2% |
2.80% |
0.000% |
0 |
0 |
7.67 |
a |
n/a |
|
B13 |
26 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
7.20 |
b |
n/a |
|
B117 |
20 |
201.5 |
99.3% |
0.71% |
0.001% |
2932 |
5 ´ 1020 |
9.08 |
a |
59% |
|
B123 |
19 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
15.72 |
a |
n/a |
|
B128 |
20 |
201.6 |
99.3% |
0.71% |
0.000% |
48 |
8 ´ 1018 |
17.93 |
c |
41% |
|
B129 |
20 |
201.6 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
17.65 |
c |
34% |
|
B132 |
20 |
201.7 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
18.02 |
c |
52% |
|
B140 |
25 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
16.13 |
c |
99% |
|
B141 |
23 |
202.1 |
99.3% |
0.71% |
0.000% |
497 |
9 ´ 1019 |
8.22 |
a |
99% |
|
B142 |
22 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
5.58 |
c |
n/a |
|
B147 |
20 |
201.7 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
11.18 |
c Ti |
100% |
|
Q1 |
20 |
200.0 |
99.0% |
1.00% |
0.000% |
0 |
0 |
7 |
g |
n/a |
|
Q2 |
20 |
200.0 |
99.0% |
1.00% |
0.000% |
0 |
0 |
7 |
g |
n/a |
|
Q3 |
20 |
200.0 |
99.0% |
1.00% |
0.000% |
0 |
0 |
7 |
g |
n/a |
|
Q4 |
20 |
200.0 |
98.0% |
2.00% |
0.000% |
0 |
0 |
7 |
g |
n/a |
Table A.1. Summary of Diamond Growth Runs
Key to Symbols
used:
Sbt: substrate used
a : p-type boron (B) doped silicon, (100) orientation,
400 mm thick, 1 – 10 W cm resistivity
b: n-type phosphorous (P) doped silicon, (100) orientation,
400 – 600 mm thick, resistivity <
0.5 W cm
c: undoped silicon, <100> orientation, 3 mm thick
g: undoped quartz, 1 mm
c Ti : c silicon partially covered
by titanium (Ti)
%d: percentage of growth run for which diborane was
added to the gas mix.
Note: Data provided by Dr Latto and Dr May