This appendix
presents scanning electron micrographs and laser Raman spectra relevant to the
results presented within Chapters 5-7.
The appendix is split into three sections which contain data for films
grown using various (a) *T*_{sub} using 50%CH_{4}/50%CO_{2}
gas mixtures, (b) H_{2}S additions to 1%CH_{4}/H_{2}
gas mixtures and (c) H_{2}S additions to 51%CH_{4}/49%CO_{2}
gas mixtures

All the
following data is for diamond films deposited on *n*-type Si (100) wafers
under the conditions outlined below (See Chapter 5).

Gas Mixture |
50%CH |

Total Flow rate / sccm |
80 |

Applied Microwave Power / W |
1000 |

Chamber Pressure / Torr |
40 |

Substrate Temperature |
Varies between different films |

The sample code,
*T*_{sub} and growth rate of each film is also given.

(Sample
C4, *T*_{sub} = 434°C, Growth Rate = 0.075 mm
h^{-1})

(Sample
C3, *T*_{sub} = 512°C, Growth Rate = 0.101 mm
h^{-1})

(Sample
C7, *T*_{sub} = 590°C, Growth Rate = 0.171 mm
h^{-1})

(Sample
C12, *T*_{sub} = 645°C, Growth Rate = 0.213 mm
h^{-1})

(Sample
C6, *T*_{sub} = 649°C, Growth Rate = 0.181 mm
h^{-1})

(Sample
C10, *T*_{sub} = 843°C, Growth Rate = 0.398 mm
h^{-1})

(Sample
C11, *T*_{sub} = 863°C, Growth Rate = 0.427 mm
h^{-1})

All the following data is for diamond films deposited on Si (100) wafers under the conditions outlined below (see Chapter 6). It should be noted that for the sake of clarity, curve fits are not shown for these Raman spectra.

Gas Mixture |
H |

Total Flow rate / sccm |
200 |

H |
Varies between films |

Applied Microwave Power / W |
1000 |

Chamber Pressure / Torr |
40 |

Substrate Temperature / °C |
900 |

The sample code,
substrate type and gas phase H_{2}S addition for each film is given.

(Sample
S2, *n*-type Si, 50 ppm H_{2}S addition)

(Sample S1, *n*-type
Si, 100 ppm H_{2}S addition/Sample S3, *n*-type Si,200 ppm H_{2}S
addition)

(Sample S4, *n*-type
Si, 400 ppm H_{2}S addition/ Sample S5, *n*-type Si, 500 ppm H_{2}S
addition)

(Sample
S6, *n*-type Si, 1000 ppm H_{2}S addition)

(Sample
S7, *n*-type Si, 5000 ppm H_{2}S addition)

(Sample
S11, undoped Si, 0 ppm H_{2}S addition, Growth rate = 0.575 mm h^{-1})

(Sample
S9, undoped Si, 1000 ppm H_{2}S addition, Growth rate = 0.543 mm h^{-1})

(Sample
S20, undoped Si, 3000 ppm H_{2}S addition, Growth rate = 0.531 mm h^{-1})

(Sample
S10, undoped Si, 5000 ppm H_{2}S addition, Growth rate = 0.500 mm h^{-1})

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 7).

Gas Mixture |
H |

Total Flow rate / sccm |
100 |

H |
Varies between films |

Applied Microwave Power / W |
1000 |

Chamber Pressure / Torr |
40 |

Substrate Temperature / °C |
900 |

The sample code,
*T*_{sub}, gas phase H_{2}S addition and growth rate for
each film is given.

(Sample
S26, *T*_{sub} 620°C, 0 ppm H_{2}S addition, Growth Rate = 0.239 mm h^{-1})

(Sample
S34, *T*_{sub} 620°C, 100 ppm H_{2}S addition, Growth Rate = 0.230 mm h^{-1})

(Sample
S35, *T*_{sub} 620°C, 200 ppm H_{2}S addition, Growth Rate = 0.257 mm h^{-1})

(Sample
S36, *T*_{sub} 620°C, 400 ppm H_{2}S addition, Growth Rate = 0.178 mm h^{-1})

(Sample
S37, *T*_{sub} 620°C, 600 ppm H_{2}S addition, Growth Rate = 0.232 mm h^{-1})

(Sample
S38, *T*_{sub} 620°C, 800 ppm H_{2}S addition, Growth Rate = 0.156 mm h^{-1})

(Sample
S45, *T*_{sub} 620°C, 2000 ppm H_{2}S addition, Growth Rate = 0.177
mm h^{-1})

(Sample
S46, *T*_{sub} 620°C, 3500 ppm H_{2}S addition, Growth Rate = 0.132
mm h^{-1})

(Sample
S47, *T*_{sub} 620°C, 5000 ppm H_{2}S addition, Growth Rate = 0.103
mm h^{-1})

(Sample
S25, *T*_{sub} 900°C, 0 ppm H_{2}S addition, Growth Rate = 3.00 mm h^{-1})

(Sample
S29, *T*_{sub} 900°C, 100 ppm H_{2}S addition, Growth Rate = 2.10 mm h^{-1})

(Sample
S30, *T*_{sub} 900°C, 200 ppm H_{2}S addition, Growth Rate = 2.43 mm h^{-1})

(Sample
S39, *T*_{sub} 900°C, 400 ppm H_{2}S addition, Growth Rate = 2.04 mm h^{-1})

(Sample
S40, *T*_{sub} 900°C, 600 ppm H_{2}S addition, Growth Rate = 1.39 mm h^{-1})

(Sample
S41, *T*_{sub} 900°C, 800 ppm H_{2}S addition, Growth Rate = 1.89 mm h^{-1})

(Sample
S42, *T*_{sub} 900°C, 2000 ppm H_{2}S addition, Growth Rate = 1.48 mm h^{-1})

(Sample
S43, *T*_{sub} 900°C, 3500 ppm H_{2}S addition, Growth Rate = 1.56 mm h^{-1})

(Sample
S44, *T*_{sub} 900°C, 5000 ppm H_{2}S addition, Growth Rate = 1.28 mm h^{-1})