Appendix II. SEM and LRS Data

 

This appendix presents scanning electron micrographs and laser Raman spectra relevant to the results presented within Chapters 5-7.  The appendix is split into three sections which contain data for films grown using various (a) T_sub using 50%CH₄/50%CO₂ gas mixtures, (b) H₂S additions to 1%CH₄/H₂ gas mixtures and (c) H₂S additions to 51%CH₄/49%CO₂ gas mixtures

 

(a). 50%CH₄/50%CO₂ Gas Mixtures

 

All the following data is for diamond films deposited on n-type Si (100) wafers under the conditions outlined below (See Chapter 5).

 

Gas Mixture	50%CH4/50%CO2
Total Flow rate / sccm	80
Applied Microwave Power / W	1000
Chamber Pressure / Torr	40
Substrate Temperature	Varies between different films

 

The sample code, T_sub and growth rate of each film is also given.

 

(Sample C4, T_sub = 434°C, Growth Rate = 0.075 mm h^-1)

 

(Sample C3, T_sub = 512°C, Growth Rate = 0.101 mm h^-1)

 

(Sample C7, T_sub = 590°C, Growth Rate = 0.171 mm h^-1)

(Sample C12, T_sub = 645°C, Growth Rate = 0.213 mm h^-1)

 

(Sample C6, T_sub = 649°C, Growth Rate = 0.181 mm h^-1)

 

(Sample C10, T_sub = 843°C, Growth Rate = 0.398 mm h^-1)

 

(Sample C11, T_sub = 863°C, Growth Rate = 0.427 mm h^-1)

(b). H₂S/1%CH₄/H₂ Gas Mixtures

 

All the following data is for diamond films deposited on Si (100) wafers under the conditions outlined below (see Chapter 6).  It should be noted that for the sake of clarity, curve fits are not shown for these Raman spectra.

 

Gas Mixture	H2S/1%CH4/H2
Total Flow rate / sccm	200
H2S Addition	Varies between films
Applied Microwave Power / W	1000
Chamber Pressure / Torr	40
Substrate Temperature / °C	900

The sample code, substrate type and gas phase H₂S addition for each film is given.

(Sample S2, n-type Si, 50 ppm H₂S addition)

 

(Sample S1, n-type Si, 100 ppm H₂S addition/Sample S3, n-type Si,200 ppm H₂S addition)

(Sample S4, n-type Si, 400 ppm H₂S addition/ Sample S5, n-type Si, 500 ppm H₂S addition)

 

(Sample S6, n-type Si, 1000 ppm H₂S addition)

(Sample S7, n-type Si, 5000 ppm H₂S addition)

 

 

(Sample S11, undoped Si, 0 ppm H₂S addition, Growth rate = 0.575 mm h^-1)

 

 

(Sample S9, undoped Si, 1000 ppm H₂S addition, Growth rate = 0.543 mm h^-1)

 

 

(Sample S20, undoped Si, 3000 ppm H₂S addition, Growth rate = 0.531 mm h^-1)

 

(Sample S10, undoped Si, 5000 ppm H₂S addition, Growth rate = 0.500 mm h^-1)

 

(c). H₂S/51%CH₄/49%CO₂ Gas Mixtures

 

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 7).

 

Gas Mixture	H2S/51%CH4/49%CO2
Total Flow rate / sccm	100
H2S Addition	Varies between films
Applied Microwave Power / W	1000
Chamber Pressure / Torr	40
Substrate Temperature / °C	900

 

The sample code, T_sub, gas phase H₂S addition and growth rate for each film is given.

 

(Sample S26, T_sub 620°C, 0 ppm H₂S addition, Growth Rate = 0.239 mm h^-1)

 

(Sample S34, T_sub 620°C, 100 ppm H₂S addition, Growth Rate = 0.230 mm h^-1)

 

 

(Sample S35, T_sub 620°C, 200 ppm H₂S addition, Growth Rate = 0.257 mm h^-1)

 

 

(Sample S36, T_sub 620°C, 400 ppm H₂S addition, Growth Rate = 0.178 mm h^-1)

 

(Sample S37, T_sub 620°C, 600 ppm H₂S addition, Growth Rate = 0.232 mm h^-1)

 

(Sample S38, T_sub 620°C, 800 ppm H₂S addition, Growth Rate = 0.156 mm h^-1)

 

(Sample S45, T_sub 620°C, 2000 ppm H₂S addition, Growth Rate = 0.177 mm h^-1)

 

(Sample S46, T_sub 620°C, 3500 ppm H₂S addition, Growth Rate = 0.132 mm h^-1)

 

(Sample S47, T_sub 620°C, 5000 ppm H₂S addition, Growth Rate = 0.103 mm h^-1)

 

(Sample S25, T_sub 900°C, 0 ppm H₂S addition, Growth Rate = 3.00 mm h^-1)

 

(Sample S29, T_sub 900°C, 100 ppm H₂S addition, Growth Rate = 2.10 mm h^-1)

 

(Sample S30, T_sub 900°C, 200 ppm H₂S addition, Growth Rate = 2.43 mm h^-1)

 

 

(Sample S39, T_sub 900°C, 400 ppm H₂S addition, Growth Rate = 2.04 mm h^-1)

 

(Sample S40, T_sub 900°C, 600 ppm H₂S addition, Growth Rate = 1.39 mm h^-1)

 

(Sample S41, T_sub 900°C, 800 ppm H₂S addition, Growth Rate = 1.89 mm h^-1)

 

 

 

(Sample S42, T_sub 900°C, 2000 ppm H₂S addition, Growth Rate = 1.48 mm h^-1)

 

(Sample S43, T_sub 900°C, 3500 ppm H₂S addition, Growth Rate = 1.56 mm h^-1)

 

(Sample S44, T_sub 900°C, 5000 ppm H₂S addition, Growth Rate = 1.28 mm h^-1)