Appendix III. XPS Data

 

This Appendix presents X-ray photoelectron spectra relevant to the results presented within Chapters 6 and 7. The appendix is split into two sections, which contain data for films grown at various H2S additions to (a) 1%CH4/H2 and 0.5%CS2/H2 gas mixtures and (b) 51%CH4/49%CO2 gas mixtures

 

(a). H2S/1%CH4/H2 and 0.5%CS2/H2 Gas Mixtures

 

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 6).

 

Gas Mixture

H2S/1%CH4/H2 or 0.5%CS2/H2 (S14)

Total Flow rate / sccm

200

H2S Addition

Varies between films

Applied Microwave Power / W

1000

Chamber Pressure / Torr

40

Substrate Temperature / C

900

 

The sample code, gas phase H2S addition and S/C ratio for each film is given.

(Sample S1, 100 ppm H2S addition, film S/C ratio = 0.00 %)

 

(Sample S6, 1000 ppm H2S addition, film S/C ratio = 0.026 %)

 

(Sample S12, 3000 ppm H2S addition, film S/C ratio = 0.11 %)

 

(Sample S7, 5000 ppm H2S addition, film S/C ratio = 0.22 %)

 

(Sample S7 REPEAT, 5000 ppm H2S addition, film S/C ratio = 0.44 %)

 

Sample S7 was then Ar etched for ~ 2 hours (etch rate not known).

 

(Sample S7 AFTER ETCH, 5000 ppm H2S addition, film S/C ratio = 0.34 %)

(Sample S14, 0.5%CS2/H2, film S/C ratio = 0.16 %)

(b). H2S/51%CH4/49%CO2 Gas Mixtures

 

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 7).

 

Gas Mixture

H2S/51%CH4/49%CO2

Total Flow rate / sccm

100

H2S Addition

Varies between films

Applied Microwave Power / W

1000

Chamber Pressure / Torr

40

Substrate Temperature / C

900

 

The sample code, Tsub, gas phase H2S addition and S/C ratio for each film is given.

 

(Sample S45, Tsub = 620C, 2000 ppm H2S addition, film S/C ratio = 0.00 %)

 

 

(Sample S46, Tsub = 620C, 3500 ppm H2S addition, film S/C ratio = 0.00 %)

 

(Sample S47, Tsub = 620C, 5000 ppm H2S addition, film S/C ratio = 0.00 %)

 

(Sample S42, Tsub = 900C, 2000 ppm H2S addition, film S/C ratio < 0.02 %)

 

(Sample S43, Tsub = 900C, 3500 ppm H2S addition, film S/C ratio = 0.07 %)

 

(Sample S44, Tsub = 900C, 5000 ppm H2S addition, film S/C ratio = 0.08 %)