This Appendix
presents X-ray photoelectron spectra relevant to the results presented within
Chapters 6 and 7. The appendix is split
into two sections, which contain data for films grown at various H_{2}S
additions to (a) 1%CH_{4}/H_{2} and 0.5%CS_{2}/H_{2}
gas mixtures and (b) 51%CH_{4}/49%CO_{2} gas mixtures

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 6).

Gas Mixture |
H |

Total Flow rate / sccm |
200 |

H |
Varies between films |

Applied Microwave Power / W |
1000 |

Chamber Pressure / Torr |
40 |

Substrate Temperature / °C |
900 |

The sample code,
gas phase H_{2}S addition and S/C ratio for each film is given.

(Sample S1, 100 ppm H_{2}S addition, film S/C ratio =
0.00 %)

(Sample S6, 1000 ppm H_{2}S addition, film S/C ratio
= 0.026 %)

(Sample S12, 3000 ppm H_{2}S addition, film S/C ratio
= 0.11 %)

(Sample S7, 5000 ppm H_{2}S addition, film S/C ratio
= 0.22 %)

(Sample
S7 **REPEAT**, 5000 ppm H_{2}S addition, film S/C ratio = 0.44 %)

Sample S7 was then Ar etched for ~ 2 hours (etch rate not known).

(Sample S7 **AFTER ETCH**, 5000 ppm H_{2}S
addition, film S/C ratio = 0.34 %)

(Sample S14, **0.5%CS _{2}/H_{2}**, film
S/C ratio = 0.16 %)

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 7).

Gas Mixture |
H |

Total Flow rate / sccm |
100 |

H |
Varies between films |

Applied Microwave Power / W |
1000 |

Chamber Pressure / Torr |
40 |

Substrate Temperature / °C |
900 |

The sample code,
*T*_{sub}, gas phase H_{2}S addition and S/C ratio for
each film is given.

(Sample S45, *T*_{sub} = 620°C,
2000 ppm H_{2}S addition, film S/C ratio = 0.00 %)

(Sample S46, *T*_{sub} = 620°C,
3500 ppm H_{2}S addition, film S/C ratio = 0.00 %)

(Sample S47, *T*_{sub} = 620°C,
5000 ppm H_{2}S addition, film S/C ratio = 0.00 %)

(Sample S42, *T*_{sub} = 900°C,
2000 ppm H_{2}S addition, film S/C ratio < 0.02 %)

(Sample S43, *T*_{sub} = 900°C,
3500 ppm H_{2}S addition, film S/C ratio = 0.07 %)

(Sample S44, *T*_{sub} = 900°C,
5000 ppm H_{2}S addition, film S/C ratio = 0.08 %)