Appendix III. XPS Data

This Appendix presents X-ray photoelectron spectra relevant to the results presented within Chapters 6 and 7. The appendix is split into two sections, which contain data for films grown at various H₂S additions to (a) 1%CH₄/H₂ and 0.5%CS₂/H₂ gas mixtures and (b) 51%CH₄/49%CO₂ gas mixtures

(a). H₂S/1%CH₄/H₂ and 0.5%CS₂/H₂ Gas Mixtures

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 6).

Gas Mixture	H₂S/1%CH₄/H₂ or 0.5%CS₂/H₂ (S14)
Total Flow rate / sccm	200
H₂S Addition	Varies between films
Applied Microwave Power / W	1000
Chamber Pressure / Torr	40
Substrate Temperature / °C	900

The sample code, gas phase H₂S addition and S/C ratio for each film is given.

(Sample S1, 100 ppm H₂S addition, film S/C ratio = 0.00 %)

(Sample S6, 1000 ppm H₂S addition, film S/C ratio = 0.026 %)

(Sample S12, 3000 ppm H₂S addition, film S/C ratio = 0.11 %)

(Sample S7, 5000 ppm H₂S addition, film S/C ratio = 0.22 %)

(Sample S7 REPEAT, 5000 ppm H₂S addition, film S/C ratio = 0.44 %)

Sample S7 was then Ar etched for ~ 2 hours (etch rate not known).

(Sample S7 AFTER ETCH, 5000 ppm H₂S addition, film S/C ratio = 0.34 %)

(Sample S14, 0.5%CS₂/H₂, film S/C ratio = 0.16 %)

(b). H₂S/51%CH₄/49%CO₂ Gas Mixtures

All the following data is for diamond films deposited on undoped Si (100) wafers under the conditions outlined below (see Chapter 7).

Gas Mixture	H₂S/51%CH₄/49%CO₂
Total Flow rate / sccm	100
H₂S Addition	Varies between films
Applied Microwave Power / W	1000
Chamber Pressure / Torr	40
Substrate Temperature / °C	900