Appendix B

Summary of Diamond Growth Runs

 

 

sample

pressure

total flow

H2

CH4

B2H6

B:C

B doping

growth

time

sbt

%d

 

(torr)

(sccm)

%

%

%

(ppm)

(cm-3)

(hours)

 

 

B1

21

151.1

99.3%

0.71%

0.000%

0

0

7.07

a

n/a

B4

24

201.4

99.3%

0.71%

0.000%

0

0

7.45

a

n/a

B6

24

202.9

98.6%

1.42%

0.000%

0

0

6.68

a

n/a

B8

24

205.8

97.2%

2.80%

0.000%

0

0

7.67

a

n/a

B13

26

201.4

99.3%

0.71%

0.000%

0

0

7.20

b

n/a

B24

25

203.4

99.2%

0.71%

0.047%

131944

0

7.07

a

100%

B44

19

202.4

99.3%

0.71%

0.010%

27558

0

5.98

a

100%

B47

20

201.4

99.3%

0.71%

0.000%

0

0

5.78

a

n/a

B48

20

202.4

99.3%

0.71%

0.002%

5831

1 1021

9.50

a

100%

B67

21

202.4

99.3%

0.71%

0.009%

25918

5 1021

8.08

a

100%

B69

21

202.4

99.3%

0.71%

0.004%

11310

2 1021

8.08

a

100%

B102

19

201.4

99.3%

0.71%

0.000%

0

0

6.47

a

n/a

B107

20

201.5

99.3%

0.71%

0.001%

2932

5 1020

9.70

a

89%

B111

20

201.5

99.3%

0.71%

0.001%

2932

5 1020

9.08

a

59%

B112

20

201.5

99.3%

0.71%

0.000%

0

0

6.18

a

n/a

B122

19

201.5

99.3%

0.71%

0.000%

254

4 1019

12.17

a

47%

B123

19

201.4

99.3%

0.71%

0.000%

0

0

15.72

a

n/a

B128

20

201.6

99.3%

0.71%

0.000%

48

8 1018

17.93

c

41%

B129

20

201.6

99.3%

0.71%

0.000%

50

9 1018

17.65

c

34%

B130

20

201.5

99.3%

0.71%

0.000%

50

9 1018

20.02

c

33%

B131

20

201.5

99.3%

0.71%

0.000%

50

9 1018

15.02

c

52%

B134

19

201.5

99.3%

0.71%

0.000%

50

9 1018

20.77

c

68%

B135

21

137.1

99.3%

0.71%

0.000%

50

9 1018

27.20

c

40%

B140

25

201.5

99.3%

0.71%

0.000%

50

9 1018

16.13

c

99%

B141

23

202.1

99.3%

0.71%

0.000%

497

9 1019

8.22

a

99%

B142

22

201.4

99.3%

0.71%

0.000%

0

0

5.58

c

n/a

B144

20

201.5

99.3%

0.71%

0.000%

50

9 1018

14.33

c

100%

B146

20

201.5

99.3%

0.71%

0.000%

50

9 1018

13.42

c Ti

100%

B147

20

201.7

99.3%

0.71%

0.000%

50

9 1018

11.18

c Ti

100%

 

Table B.1
Diamond Growth Runs

 

Key to Symbols used in Table B.1

 

sbt = substrate used

a = p-type boron (B) doped silicon, <100> orientation,
400
mm thick, 1 10 W cm resistivity

b= n-type phosphorous (P) doped silicon, <100> orientation,
400 600
mm thick, resistivity < 0.5 W cm

c = undoped silicon, <100> orientation, 1/16 thick

c Ti = c silicon partially covered by titanium (Ti)

 

%d = percentage of growth run for which diborane was added to the gas mix.
Some growth runs were performed with an initial undoped growth phase. The quoted boron doping concentration excludes this undoped layer.