Appendix B
sample |
pressure |
total flow |
H2 |
CH4 |
B2H6 |
B:C |
B doping |
growth time |
sbt |
%d |
|
(torr) |
(sccm) |
% |
% |
% |
(ppm) |
(cm-3) |
(hours) |
|
|
B1 |
21 |
151.1 |
99.3% |
0.71% |
0.000% |
0 |
0 |
7.07 |
a |
n/a |
B4 |
24 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
7.45 |
a |
n/a |
B6 |
24 |
202.9 |
98.6% |
1.42% |
0.000% |
0 |
0 |
6.68 |
a |
n/a |
B8 |
24 |
205.8 |
97.2% |
2.80% |
0.000% |
0 |
0 |
7.67 |
a |
n/a |
B13 |
26 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
7.20 |
b |
n/a |
B24 |
25 |
203.4 |
99.2% |
0.71% |
0.047% |
131944 |
0 |
7.07 |
a |
100% |
B44 |
19 |
202.4 |
99.3% |
0.71% |
0.010% |
27558 |
0 |
5.98 |
a |
100% |
B47 |
20 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
5.78 |
a |
n/a |
B48 |
20 |
202.4 |
99.3% |
0.71% |
0.002% |
5831 |
1 ´ 1021 |
9.50 |
a |
100% |
B67 |
21 |
202.4 |
99.3% |
0.71% |
0.009% |
25918 |
5 ´ 1021 |
8.08 |
a |
100% |
B69 |
21 |
202.4 |
99.3% |
0.71% |
0.004% |
11310 |
2 ´ 1021 |
8.08 |
a |
100% |
B102 |
19 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
6.47 |
a |
n/a |
B107 |
20 |
201.5 |
99.3% |
0.71% |
0.001% |
2932 |
5 ´ 1020 |
9.70 |
a |
89% |
B111 |
20 |
201.5 |
99.3% |
0.71% |
0.001% |
2932 |
5 ´ 1020 |
9.08 |
a |
59% |
B112 |
20 |
201.5 |
99.3% |
0.71% |
0.000% |
0 |
0 |
6.18 |
a |
n/a |
B122 |
19 |
201.5 |
99.3% |
0.71% |
0.000% |
254 |
4 ´ 1019 |
12.17 |
a |
47% |
B123 |
19 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
15.72 |
a |
n/a |
B128 |
20 |
201.6 |
99.3% |
0.71% |
0.000% |
48 |
8 ´ 1018 |
17.93 |
c |
41% |
B129 |
20 |
201.6 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
17.65 |
c |
34% |
B130 |
20 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
20.02 |
c |
33% |
B131 |
20 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
15.02 |
c |
52% |
B134 |
19 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
20.77 |
c |
68% |
B135 |
21 |
137.1 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
27.20 |
c |
40% |
B140 |
25 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
16.13 |
c |
99% |
B141 |
23 |
202.1 |
99.3% |
0.71% |
0.000% |
497 |
9 ´ 1019 |
8.22 |
a |
99% |
B142 |
22 |
201.4 |
99.3% |
0.71% |
0.000% |
0 |
0 |
5.58 |
c |
n/a |
B144 |
20 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
14.33 |
c |
100% |
B146 |
20 |
201.5 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
13.42 |
c Ti |
100% |
B147 |
20 |
201.7 |
99.3% |
0.71% |
0.000% |
50 |
9 ´ 1018 |
11.18 |
c Ti |
100% |
Table B.1
Diamond Growth Runs
Key to Symbols used in Table B.1
sbt =
substrate used
a = p-type boron (B) doped silicon, <100> orientation,
400 mm
thick, 1 – 10 W cm resistivity
b= n-type phosphorous (P) doped silicon, <100> orientation,
400 – 600 mm thick, resistivity < 0.5 W cm
c = undoped silicon, <100>
orientation, 1/16 ” thick
c Ti = c silicon partially covered
by titanium (Ti)
%d = percentage of growth run for which diborane was
added to the gas mix.
Some growth runs were performed with an
initial undoped growth phase. The quoted boron doping concentration excludes
this undoped layer.