Dry Etching Laboratory - Publications 1985-94

  1. P. May and A.I. Spiers; 'Dry Etching of Aluminium/TiW Layers for Multilevel Metallisation in VLSI'; J. Electrochem. Soc. 135 (1988) 1592-1594.
  2. P.W. May, D. Field and D.F. Klemperer; 'Investigation of Atomic Chlorine Kinetic Energies in RF Plasmas'; Proc. 8th Int. Symp. Plasma Processing, Montreal, May 1990, Proc. vol.90-14, ed. G.S. Mathad and D.W. Hess (Electrochem. Soc., Pennington, N.J., 1990) p136.
  3. P.W. May, D. Field and D.F. Klemperer; 'Electron and Ion Energy Distributions in RIE Plasmas'; Proc. 8th Int. Symp. Plasma Processing, Montreal, May 1990, Proc. vol.90-14, ed. G.S. Mathad and D.W. Hess (Electrochem. Soc., Pennington, N.J., 1990). p125.
  4. D. Field, D.F. Klemperer, P.W. May and Y.P. Song; 'Ion Energy Distributions in Radio Frequency Discharges'; J. Appl. Phys., 70 (1991) 82-92.
  5. P.W. May, D. Field and D.F. Klemperer; 'Modelling Radio Frequency Discharges: Effects of Collisions upon Ion and Neutral Particle Energy Distributions'; J. Appl. Phys., 71 (1992) 3721-30.
  6. P.W. May, D. Field, D.F. Klemperer, and Y.P. Song; 'Ion Energy and Angular Distributions at the Anode of RF Etch Reactors'; J. Phys: Condens. Matter, 3 (1991) S257-S264.
  7. D. Field, P.W. May, D.F. Klemperer and Y.P. Song; 'RF Plasmas: Ion Energies and Modelling Reactive Ion Etching', in Plasma Chemistry Sources and Diagnostics, IEE Colloquium Digest No. 1991/090, pp.5/1-5/3, presented at the Institute of Electrical Engineers, Savoy Place, London, 25/4/91.
  8. P.W. May, D. Field, D.F. Klemperer and Y.P. Song; 'Ion Energy Distributions and Sidewall Profiles in Reactive Ion Etching', Mater. Sci. Forum., 140-142 (1993) 121-132, in 'Plasma Properties, Deposition and Etching', edited by J.J. Pouch and S.A. Alterovitz, (Trans Tech Publications, Aedermannsdorf, Switzerland, 1993).
  9. P.W. May, D. Field and D.F. Klemperer; 'Simulations of Sidewall Profiles in Reactive Ion Etching'; J. Phys. D: Appl. Phys., 26 (1993) 598-606.
  10. P.W. May, D.F. Klemperer and D.Field; 'Simulations of Electron Distributions in the Sheath Region of Reactive Ion Etching Plasmas'; J. Appl. Phys., 73 (1993) 1634.
  11. A.C. Dickenson, D. Field, D.F. Klemperer, P.W. May, P.C. Johnson and R.A. Pitts, 'Ion Energy Distributions at the Anode of a Reactive Ion Etcher', Proc. 3rd Int. Symp. on Proc. Physics and Modeling in Semicond. Technol., Honolulu, HI, 1993, Proceedings Volume PV93-6, eds. G.R. Srinvasan, K. Taniguchi and C.S. Murthy (Electrochem. Soc, Pennington, NJ), pp457-470.
  12. I.M. Hedgecock, P.W. May, D. Field and D.F. Klemperer, 'Simulation of Sidewall Profiles in Reactive Ion Etching', Proc. 3rd Int. Symp. on Proc. Physics and Modeling in Semicond. Technol., Honolulu, HI, 1993 Proceedings Volume PV93-6, eds. G.R. Srinvasan, K. Taniguchi and C.S. Murthy (Electrochem. Soc, Pennington, NJ), pp491-505.
  13. A.C. Dickenson, D. Field, D.F. Klemperer and P.W. May, 'Ion Energy Distributions at the Anode of a Reactive Ion Etcher', Proc. 11th Int. Symp. Plasma Chem., Loughborough, Aug 1993 (IUPAC, 1993, edited by J.Harry) p1278.
  14. I.M. Hedgecock, P.W. May, D. Field, D.F. Klemperer, 'The Modelling of Sidewall Profiles Produced During Reactive Ion Etching', Proc. 11th Int. Symp. Plasma Chem., Loughborough, Aug 1993 (IUPAC, 1993, edited by J.Harry) p921.

PhD and MSc Theses Produced at the University of Bristol, School of Chemistry

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